3-2(79) 2013 CHEMISTRY
Yu.V. Terentyeva, L.V. Fomina, S.A. Beznosjuk
Computer Simulation of Quantum Relaxation of Electromechanical Nanochips Consisting of A3B5:Mn
In this article the results obtained in computer simulation of femtosecond processing of AlAs, GaAs, InAs nanolayers are given. Kinetic curves of A3B5:Mn semiconductor layers relaxation are presented as well as temperature influence on such parameters of mentioned systems as the relaxed nanolayer energy, relaxation time and the amplitude of energy fluctuations of considered systems.
DOI 10.14258/izvasu(2013)3.2-44
Key words: computer simulation, quantum relaxation, thermofield dynamic fluctuations, semiconductors, doping manganese
Full text at PDF, 338Kb. Language: Russian.
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