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Scientific journal of the
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The News of Altai State University
Print ISSN 1561-9443
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Content of 1-2(73) 2012
Management, Computer Facilities and Computer Science
Mathematics and Mechanics

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A.N. Makrushina, S.V. Makarov, V.A. Plotnikov

Relaxation Processes in Thin Films of Copper and Tin

The study analyzes relaxation in Cu-Sn doublelayer and multilayer films. It is determined that the resistance depends on temperature in the multilayer film. An X-ray analysis of annealed and not annealed films revealed the formation of Cu6Sn5 compound. Sound microscope method detected formation of normalized substructure.
Key words: thin-film structures, structural relaxation, void volume, Arrhenius plot, electrical resistivity, intermetallide, substructure.

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