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The News of Altai State University
Print ISSN 1561-9443
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Content of 3(33) 2004

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L.V. Fomina, S.A. Beznosyuk, A.G. Bochkarev, S.E. Lebedenko, V.M. Spodarev

Creation of diode barrio Me (VIII) # AIIIBV by using halcogenide surfacing

Authors discuss mechanism of shaping the coherent interfacing on the border a semiconductor # halcogenide # a metal when shaping the unbending contacts a metal VIII groups # a semiconductor of type AIIIBV in conditions halcogenide passivation surface of semiconductor and electrosedimentation of metal. Brought experimental tinned electrophysical feature of contacts Ni/GaAs n-a type and Rh/InP n-a type, as well as models of construction borders GaAs # GaS(Se).

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